Impact of ion energy on single-event upset

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Witryna1 gru 1998 · The U.S. Department of Energy's Office of Scientific and Technical Information Impact of ion energy on single-event upset (Journal Article) OSTI.GOV skip to main content WitrynaWhen an impact between an ion and an electron, assumed initially at rest, is frontal, the energy transferred to the electron is maximum and equal to 2 v 2, and the maximum fractional energy loss is given by Δ E / E = 4 / M where E, v, and M are the projectile incident energy, speed, and mass, respectively. In addition, the scattering of one ...

Impact of heavy ion energy and species on single-event …

WitrynaEstimating the rate of SEU events requires the following information: 1. The critical charge: how much charge must be injected into a node to trigger regenerative action. 2. The device geometry: the area of the sensitive node and the available path length for an ionizing particle to deposit its energy. 3. WitrynaSingle Event Effects (SEEs) are caused by a single, energetic particle, and can take on many forms. ... spacecraft designers have to be concerned with two main causes of Single Event Effects (SEEs): cosmic rays and high energy protons. For cosmic rays, … citroen hy van fish and chips

Impact of heavy ion energy and species on single-event upset in ...

Witryna1 gru 1998 · The impact of ion energy on single-event upset was investigated by irradiating CMOS SRAMs with low and high-energy heavy ions. A variety of CMOS SRAM technologies was studied, with gate lengths ranging from 1 to 0.5 {micro}m and integration densities from 16 Kbit to 1 Mbit. WitrynaLinear Energy Transfer; Depletion Layer; Device Under Test; Ambipolar Diffusion ... R.G. Martin, and Y. Song, “The Size Effect of an Ion Charge Track on Single Event Multiple Bit Upset,” IEEE Trans. Nucl. Sci. NS-34 (6), 1305–1309 ... “Single Event Upset in Bipolar Technologies and Hardness Assurance Support Activities,” SAIC. Inc ... WitrynaImpact of heavy ion energy and nuclear interactions on single-event upset and latchup in integrated circuits. IEEE Trans Nucl Sci., 54: 2303 – 2311. doi: 10.1109/TNS.2007.909844 , [Google Scholar] Petersen, E. 2011. Single event effects in aerospace, 337 – 343. Hoboken, NJ: Wiley. ISBN 9781118084328 [Google Scholar] dick powell sings

The Impacts of Heavy Ion Energy on Single Event Upsets in SOI …

Electronics Free Full-Text The Inflection Point of Single Event ...

WitrynaThe two channels can be seamlessly interleaved for conversion rates up to 3.2 GSPS. The device was put through heavy ion testing and was monitored for Single Event Latch-up, Single Event Functional Interrupt and Single Event Upset (SEU). Testing was done at two different ion energies and the impact of ion energy on SEU response is … Witryna11 sie 1999 · Single event transients (SET) occur when an energetic subatomic particle strikes a combinational logic element. The charge deposited by the particle causes a transient voltage disturbance, which can propagate to a storage element and be latched, resulting in single event upset (SEU). The logic design style, storage element … dick powell cry dangerWitrynaImpact ionization is an efficient method to generate electron–hole pairs [1,3]. In N-channel MOSFET, the electrons are collected at the drain and the holes are retained in the body by a negative back-gate voltage. Writing “1” is fast but requires a high drain voltage () and consumes power. The parasitic bipolar transistor (PBT) is ... citroen grand picasso tyres

"WitrynaThe JEDEC recommended definition is the first effect when the particle fluence = 10 7 ions/cm 2. Linear Energy Transfer (LET) ... A full SEU analysis considers the system effects of an upset. For example, a single bit flip, while not damaging to the circuitry involved, may damage the subsystem or system (i.e., initiating a pyrotechnic event ... " - Impact of ion energy on single-event upset

Impact of ion energy on single-event upset

Single-Event Upset and Snapback in Silicon-on-Insulator Devices …

Witryna20 mar 2024 · Abstract: The dependence of single event upset (SEU) on heavy ion energy was investigated for partially depleted silicon-on-insulator static random access memories. An unexpected phenomenon has been shown that the SEU cross sections decrease 70% with the increase of 12 C ion linear energy transfer (LET) from 1.7 to … Witryna12 gru 2007 · Abstract: The effects of heavy ion energy and nuclear interactions on the single-event upset (SEU) and single-event latchup (SEL) response of commercial and radiation-hardened CMOS ICs are explored. Above the threshold LET for direct ionization-induced upsets, little difference is observed in single-event upset and …

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WitrynaAbstract: Geant4 tools were used to model the single event upset (SEU) of static random access memory cells induced by heavy ion irradiation. Simulated results obtained in two diﬀerent regions of incident ion energies have been compared in order to observe the SEU occurrence by energetic ions and their eﬀects on the radial … Witryna15 sie 2000 · The Single Event Upset (SEU) characteristics of a CMOS SRAM cell irradiated under conditions that simulate the total-dose degradation anticipated in space applications are experimentally and theoretically investigated. ... and immediately measures the effect of a high-energy ion strike on circuit performance. Information …

WitrynaIn 1979, James Ziegler of IBM, along with W. Lanford of Yale, first described the mechanism whereby a sea-level cosmic ray could cause a single-event upset in electronics. 1979 also saw the world’s first heavy ion "single-event effects" test at a particle accelerator facility, conducted at Lawrence Berkeley National Laboratory's 88 … Witryna8 lut 2024 · The single event upset effect of MOSFET under heavy ion irradiation and the influence of heavy ion irradiation on transient drain current are investigated. The results show that the transient drain current of MOSFET devices will increase rapidly when heavy ions are incident, and then the logic state of the devices will change.

Witryna1 maj 2024 · Traditionally, the linear energy transfer (LET) is considered as the only important factor influencing the sensitivity of the single-event effect (SEE) in semiconductor devices [1]. However, studies in recent years indicated that except for LET, the incident heavy ions energy and species will also impact SEE's measured … Witrynafacilities are suitable for providing a variety of ions over a range of energies for testing. The devices under test (DUTs) were irradiated with heavy ions having linear energy transfers (LETs) ranging from 0.59 to 120 MeV•cm 2 /mg. Fluxes ranged from 1x10 2 to 1x10 7 particles/cm 2 /s, depending on device sensitivity.

WitrynaSingle Event Effect (SEE)- any measurable effect to a circuit due to an ion strike. This includes (but is not limited to) SEUs, SHEs, SELs, SEBs, SEGRs, and Single Event Dielectric Rupture (SEDR). Single Event Upset (SEU) - a change of state or transient induced by an energetic particle such as a cosmic ray or proton in a device.

Witrynaprovide a variety of ions over arange of energies for testing. Each device under test (DUT) was irradiated with heavy ions having linear energy transfer (LET) ranging from 0.07 to 80 MeV•cm 2 /mg. Fluxes ranged from 1x10 2 to 1x10 5 particles/cm 2 /s, depending on device sensitivity. Representative ions used are listed in Tables I, II … dick powell theatre on you tube citroen hy motorWitryna11 gru 2007 · The effects of heavy ion energy and nuclear interactions on the single-event upset (SEU) and single-event latchup (SEL) response of commercial and radiation-hardened CMOS ICs are explored. Above the threshold LET for direct ionization-induced upsets, little difference is observed in single-event upset and … citroen india monthly salesWitryna5 lip 2024 · Abstract: The dependence of temperature and back-gate bias on single-event upset (SEU) sensitivity is investigated based on a 0.2- $\mu \text{m}$ double silicon-on-insulator (DSOI) technology. At room temperature, an obvious decrease in SEU cross section with the negative back-gate bias is experimentally observed for a … citroen in south yorkshireWitrynaThis thesis aims at determining the impact of thermal and intermediate energy neutrons (0.2-20 MeV) with respect to highly energetic particles on the Single Event Upset (SEU) and Latch-up (SEL ... dick powell related to william powellWitrynaThe impact of ion energy on single-event upset was investigated by irradiating CMOS SRAMs with low and high-energy heavy ions. A variety of CMOS SRAM technologies was studied, with gate lengths ranging from 1 to 0.5 /spl mu/m and integration densities from 16 Kbit to 1 Mbit. No significant differences were observed between the low and … dick powell theatre three soldiersWitryna1 lip 2006 · Single event upset mechanisms for low energy deposition events in silicon germanium HBTs.. United States: N. p., 2006. ... Impact of Heavy Ion Energy and Nuclear Interactions on Single-Event Upset and Latchup in Integrated Circuits. Conference Dodd, Paul; Schwank, James; ... citroen hoenheim occasion